Other articles related with "extended defects":
76103 Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚)
  Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃
    Chin. Phys. B   2020 Vol.29 (7): 76103-076103 [Abstract] (587) [HTML 0 KB] [PDF 5017 KB] (103)
106101 Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻)
  Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
    Chin. Phys. B   2019 Vol.28 (10): 106101-106101 [Abstract] (608) [HTML 1 KB] [PDF 909 KB] (217)
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